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Effect of the doping method on luminescent properties of ZnS:Ag

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dc.contributor.author Bacherikov, Yu.Yu.
dc.contributor.author Zhuk, A.G.
dc.contributor.author Okhrimenko, O.B.
dc.contributor.author Pecherskaya-Gromadskaya, E.Yu.
dc.contributor.author Kidalov, V.V.
dc.contributor.author Optasyuk, S.V.
dc.date.accessioned 2023-02-02T12:36:34Z
dc.date.available 2023-02-02T12:36:34Z
dc.date.issued 2019
dc.identifier.citation Yu. Bacherikov, Y. U., Zhuk, A. G., Okhrimenko, O. B., Pecherskaya-Gromadskaya, E. Y., Kidalov, V. V., & Optasyuk, S. V. (2019). Effect of the doping method on luminescent properties of ZnS:Ag. Semiconductor Physics, Quantum Electronics and Optoelectronics, 22(3), 361-365. doi:10.15407/spqeo22.03.361 uk_UA
dc.identifier.uri http://elar.kpnu.edu.ua:8081/xmlui/handle/123456789/6980
dc.description.abstract Effect of doping the method on luminescent characteristics of dispersed ZnS doped with Ag has been studied in this work. The analysis of ratio of the intensity of photoluminescence bands related with the centres caused by Ag impurity and the intrinsic defects has led to the conclusion that formation of dispersed ZnS:Ag prepared using the self-propagating high-temperature synthesis (SHS) has several advantages: doping occurs directly in the process of material synthesis, possibility of simultaneous preparation of two fractions with different particle sizes, in ZnS:Ag-SHS with particle sizes greater than 20 nm there is a lower concentration of defects as compared to that in ZnS:Ag obtained using the thermal doping method. uk_UA
dc.language.iso en uk_UA
dc.publisher V. Lashkaryov Institute of Semiconductor Physics uk_UA
dc.subject self-propagating high-temperature synthesis uk_UA
dc.subject thermal doping method uk_UA
dc.subject photoluminescence uk_UA
dc.subject ZnS uk_UA
dc.subject Ag. uk_UA
dc.title Effect of the doping method on luminescent properties of ZnS:Ag uk_UA
dc.type Article uk_UA


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